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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.012 (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP131A1715SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.012 ( Vgs = 4.5V ) : Rds (on) = 0.015 ( Vgs = 2.5V ) : Rds (on) = 0.025 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 11 Ta=25 C O PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 +8 10 40 10 2.5 150 -55 ~ 150 UNITS V V A A A W C C O O ( note ) : When implemented on a glass epoxy PCB 711 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Rds ( on ) SYMBOL Idss Igss Vgs (off ) CONDITIONS Vds = 20V , Vgs = 0V Vgs = 8V , Vds = 0V Id = 1mA , Vds = 10V Id = 5A , Vgs = 4.5V Id = 5A , Vgs = 2.5V Id = 5A , Vgs = 1.5V | Yfs | Vf Id = 5A , Vds = 10V If = 10A , Vgs = 0V 0.5 0.009 0.011 0.017 34 0.8 1.1 MIN TYP MAX 10 1 Ta=25C UNITS A A V S V 1.2 0.012 0.015 0.025 Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 2000 1000 450 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 5A Vdd = 10V CONDITIONS MIN TYP 15 25 95 15 MAX Ta=25C UNITS ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C / W 712 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Drain Current:Id (A) Drain-Source Voltage:Vds (V) Drain Current:Id (A) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE Drain-Source On-State Resistance:Rds (on) ( ) Drain-Source On-State Resistance:Rds (on) ( ) DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Gate-Source Voltage:Vgs (V) Drain Current:Id (A) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Drain-Source On-State Resistance:Rds (on) ( ) Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 11 Ambient Temp. :Topr ( ) Ambient Temp. :Topr ( ) 713 CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING TIME vs. DRAIN CURRENT Capacitance:C (pF) Drain-Source Voltage:Vds (V) Switching Time:t (ns) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Reverse Drain Current:Idr (A) Gate-Source Voltage:Vgs (V) Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH 11 714 |
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